Part number:
20N50
Manufacturer:
nELL
File Size:
346.46 KB
Description:
N-channel power mosfet.
* RDS(ON) = 0.23Ω@VGS = 10V Ultra low gate charge(60nC max.) Low reverse transfer capacitance (CRSS = 27pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) m
20N50
nELL
346.46 KB
N-channel power mosfet.
📁 Related Datasheet
20N50 - N-Channel MOSFETS
(OGFD)
N-Channel MOSFETS
DESCRIPTION
The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailore.
20N50 - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 20N50
20A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced tech.
20N50 - FDP20N50
(Fairchild Semiconductor)
..
FDP20N50 500V N-Channel MOSFET
May 2006
FDP20N50
500V N-Channel MOSFET
Features
• 20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V • Low .
20N50-HC - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
20N50-HC
20A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 20N50-HC is a N-channel enhancement MOSFET using UTC’s.
20N50C1 - HGTH20N50C1
(Intersil Corporation)
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
April 1995
15A, 20A, 400V and 500V N-Channel IGBTs
Packages
HGTH-TYPES JEDEC TO-218AC
EM.
20N50E - MTW20N50E
(ON Semiconductor)
MTW20N50E
Preferred Device
Power MOSFET 20 Amps, 500 Volts
N−Channel TO−247
This high voltage MOSFET uses an advanced termination scheme to provide en.
20N511K - Metal Oxide Varistor
(HUAAN)
TMOV 20M(E,N)Series
Metal Oxide Varistors Data Sheet
Features
·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·D.
20N560K - Metal Oxide Varistor
(HUAAN)
TMOV 20M(E,N)Series
Metal Oxide Varistors Data Sheet
Features
·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·D.
