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IRF640

N-Channel Power MOSFET

IRF640 Features

* RDS(ON) = 0.180Ω @ VGS = 10V Ultra low gate charge(63nC max.) Low reverse transfer capacitance (CRSS = 91pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF640A) D G D S TO-263(D2PAK) (IRF640H) D (Drain)

IRF640 General Description

Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extrem.

IRF640 Datasheet (595.59 KB)

Preview of IRF640 PDF

Datasheet Details

Part number:

IRF640

Manufacturer:

nELL

File Size:

595.59 KB

Description:

N-channel power mosfet.

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IRF640 N-Channel Power MOSFET nELL

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