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BUK9Q29-60E - 60V N-channel Trench MOSFET

BUK9Q29-60E Description

BUK9Q29-60E 60 V, N-channel Trench MOSFET 18 April 2025 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) Surface-Mounted Device (SMD) plastic package using Trench MOSF.

BUK9Q29-60E Features

* Logic-level compatible
* Very fast switching
* Trench MOSFET technology
* Fully automotive qualified to AEC-Q101 at 175°C

BUK9Q29-60E Applications

* LED Lighting
* Switching circuits
* DC-DC conversion 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-sourc

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60V N-channel Trench MOSFET nexperia
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