GANE1R8-100QBA Datasheet - nexperia

GANE1R8-100QBA, 100V Gallium Nitride FET

VQFN7 GANE1R8-100QBA 100 V, 1.8 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 13 March 20

Features

* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge

Applications

* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm 3. Applications
* High power density and high efficiency power conversion
* AC-to-DC converters, (secondary stage)

GANE1R8-100QBA-nexperia.pdf