* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qualified for standard applications
* RoHS, Pb-free, REACH-compliant
* High efficiency and high po
GANE1R8-100QBA Datasheet (302.23 KB)
GANE1R8-100QBA
302.23 KB
100v gallium nitride fet.
VQFN7
GANE1R8-100QBA
100 V, 1.8 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0
mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
13 March 20.
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