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GANE350-700BBA - 700V Gallium Nitride FET

Description

The GANE350-700BBA is a general purpose 700 V, 350 mΩ Gallium Nitride (GaN) FET in a DPAK package.

It is a normally-off e-mode device offering superior performance.

2.

Features

  • Enhancement mode - normally-off power switch.
  • Ultra high frequency switching capability.
  • No body diode.
  • Low gate charge, low output charge.
  • Qualified for standard.

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Datasheet Details

Part number GANE350-700BBA
Manufacturer nexperia
File Size 349.99 KB
Description 700V Gallium Nitride FET
Datasheet download datasheet GANE350-700BBA Datasheet
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Full PDF Text Transcription

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DPAK GANE350-700BBA 700 V, 350 mOhm Gallium Nitride (GaN) FET in DPAK package 13 March 2025 Product data sheet 1. General description The GANE350-700BBA is a general purpose 700 V, 350 mΩ Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • ESD protection • RoHS, Pb-free, REACH-compliant • High efficiency and high power density 3.
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