GANE3R9-150QBA Gallium Nitride (GaN) FET

nexperia

Description

VQFN7 GANE3R9-150QBA 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 30 April 20.
The GANE3R9-150QBA is a a general purpose 150 V, 3.

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Datasheet Specifications

Part number: GANE3R9-150QBA
Manufacturer: nexperia ↗
File Size: 299.24 KB
Datasheet: GANE3R9-150QBA-nexperia.pdf
Description: Gallium Nitride (GaN) FET

Features

* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge

Applications

* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm 3. Applications
* High power density and high efficiency power conversion
* AC-to-DC converters, (secondary stage)

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GANE3R9-150QBA Gallium Nitride GaN FET nexperia

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