* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qualified for standard applications
* RoHS, Pb-free, REACH-compliant
* High efficiency and high po
GANE3R9-150QBA Datasheet (299.24 KB)
GANE3R9-150QBA
299.24 KB
Gallium nitride (gan) fet.
VQFN7 GANE3R9-150QBA 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 30 April 20.
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