* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qualified for standard applications
* RoHS, Pb-free, REACH-compliant
* High efficiency and high po
GANE7R0-100CBA Datasheet (412.75 KB)
GANE7R0-100CBA
412.75 KB
100v gallium nitride fet.
WLCSP6 GANE7R0-100CBA 100 V, 7.0 mOhm Gallium Nitride (GaN) FET in a 2.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP) 13 March 2025 Product.
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