Datasheet4U Logo Datasheet4U.com

GANE190-700BBA - 700V Gallium Nitride FET

Description

The GANE190-700BBA is a general purpose 700 V, 190 mΩ Gallium Nitride (GaN) FET in a DPAK package.

It is a normally-off e-mode device offering superior performance.

2.

Features

  • Enhancement mode - normally-off power switch.
  • Ultra high frequency switching capability.
  • No body diode.
  • Low gate charge, low output charge.
  • Qualified for standard.

📥 Download Datasheet

Datasheet preview – GANE190-700BBA

Datasheet Details

Part number GANE190-700BBA
Manufacturer nexperia
File Size 352.48 KB
Description 700V Gallium Nitride FET
Datasheet download datasheet GANE190-700BBA Datasheet
Additional preview pages of the GANE190-700BBA datasheet.

📁 Similar Datasheet

Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
DPAK GANE190-700BBA 700 V, 190 mOhm Gallium Nitride (GaN) FET in DPAK package 13 March 2025 Product data sheet 1. General description The GANE190-700BBA is a general purpose 700 V, 190 mΩ Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • ESD protection • RoHS, Pb-free, REACH-compliant • High efficiency and high power density 3.
Published: |