* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qualified for standard applications
* RoHS, Pb-free, REACH-compliant
* High efficiency and high po
GANE2R7-100CBA Datasheet (635.99 KB)
GANE2R7-100CBA
635.99 KB
100v gallium nitride fet.
WLCSP22 GANE2R7-100CBA 100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP) 14 March 2025 Prod.
📁 Related Datasheet
GANE190-700BBA 700V Gallium Nitride FET (nexperia)
GANE1R8-100QBA 100V Gallium Nitride FET (nexperia)
GANE350-650FBA 650V Gallium Nitride FET (nexperia)
GANE350-700BBA 700V Gallium Nitride FET (nexperia)
GANE3R9-150QBA Gallium Nitride (GaN) FET (nexperia)
GANE7R0-100CBA 100V Gallium Nitride FET (nexperia)
GAN039-650NBB Gallium Nitride (GaN) FET (nexperia)
GAN039-650NBBA GaN FET (nexperia)
GAN039-650NTB Gallium Nitride (GaN) FET (nexperia)
GAN041-650WSB GaN FET (nexperia)
