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GANE2R7-100CBA - 100V Gallium Nitride FET

Description

The GANE2R7-100CBA is a a general purpose 100 V, 2.7 mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP).

It is a normally-off e-mode device offering superior performance and very low on-state resistance.

2.

Features

  • Enhancement mode - normally-off power switch.
  • Ultra high frequency switching capability.
  • No body diode.
  • Low gate charge, low output charge.
  • Qualified for standard.

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Datasheet Details

Part number GANE2R7-100CBA
Manufacturer nexperia
File Size 635.99 KB
Description 100V Gallium Nitride FET
Datasheet download datasheet GANE2R7-100CBA Datasheet
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Full PDF Text Transcription

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WLCSP22 GANE2R7-100CBA 100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP) 14 March 2025 Product data sheet 1. General description The GANE2R7-100CBA is a a general purpose 100 V, 2.7 mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance and very low on-state resistance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • RoHS, Pb-free, REACH-compliant • High efficiency and high power density • Wafer Level Chip-Scale Package (WLCSP) 4.45 mm x 2.30 mm 3.
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