GANE2R7-100CBA 100V Gallium Nitride FET

nexperia

Description

WLCSP22 GANE2R7-100CBA 100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP) 14 March 2025 Prod.
The GANE2R7-100CBA is a a general purpose 100 V, 2.

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Datasheet Specifications

Part number: GANE2R7-100CBA
Manufacturer: nexperia ↗
File Size: 635.99 KB
Datasheet: GANE2R7-100CBA-nexperia.pdf
Description: 100V Gallium Nitride FET

Features

* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge

Applications

* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Wafer Level Chip-Scale Package (WLCSP) 4.45 mm x 2.30 mm 3. Applications
* High power density and high efficiency power conversion
* AC-to-DC converters, (secondary stage)
* H

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GANE2R7-100CBA 100V Gallium Nitride FET nexperia

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