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PBSS305NX 4.6A NPN transistor

PBSS305NX Description

PBSS305NX 80 V, 4.6 A NPN low VCEsat (BISS) transistor Rev.02 * 8 December 2009 Product data sheet 1.Product profile 1.1 General descript.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic packa.

PBSS305NX Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio

PBSS305NX Applications

* High-voltage DC-to-DC conversion
* High-voltage MOSFET gate driving
* High-voltage motor control
* High-voltage power switches (e. g. motors, fans)
* Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Condition

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