PBSS306NZ Datasheet - nexperia

PBSS306NZ 5.1A NPN transistor

PBSS306NZ Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High collector current gain (hFE) at high IC

* High efficiency due to less heat generation

* Smaller required Printed-Circuit Board (PCB) area than for conventio

Datasheet Details

PBSS306NZ

171.54 KB

5.1a npn transistor.

PBSS306NZ Distributor

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PBSS306NZ PBSS306NZ 5.1A NPN transistor nexperia