PBSS306NZ 5.1A NPN transistor

nexperia

Description

PBSS306NZ 100 V, 5.1 A NPN low VCEsat (BISS) transistor Rev.02 * 11 December 2009 Product data sheet 1.Product profile 1.1 General desc.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PBSS306NZ
Manufacturer: nexperia ↗
File Size: 171.54 KB
Datasheet: PBSS306NZ-nexperia.pdf
Description: 5.1A NPN transistor

Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio

Applications

* High-voltage DC-to-DC conversion
* High-voltage MOSFET gate driving
* High-voltage motor control
* High-voltage power switches (e. g. motors, fans)
* Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Condition

PBSS306NZ Distributors

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PBSS306NZ 5.1A NPN transistor nexperia

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