PBSS306PX PNP Transistor

nexperia

Description

PBSS306PX 100 V, 3.7 A PNP low VCEsat (BISS) transistor Rev.02 * 11 December 2009 Product data sheet 1.Product profile 1.1 General desc.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic packa.

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Datasheet Specifications

Part number: PBSS306PX
Manufacturer: nexperia ↗
File Size: 192.55 KB
Datasheet: PBSS306PX-nexperia.pdf
Description: PNP Transistor

Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio

Applications

* High-voltage DC-to-DC conversion
* High-voltage MOSFET gate driving
* High-voltage motor control
* High-voltage power switches (e. g. motors, fans)
* Thin Film Transistor (TFT) backlight inverter
* Automotive applications 1.4 Quick reference data Ta

PBSS306PX Distributors

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PBSS306PX PNP Transistor nexperia

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