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PBSS306PZ PNP transistor

PBSS306PZ Description

PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor Rev.3 * 26 July 2011 Product data sheet 1.Product profile 1.1 General descripti.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

PBSS306PZ Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM

PBSS306PZ Applications

* High-voltage DC-to-DC conversion
* High-voltage MOSFET gate driving
* High-voltage motor control
* High efficiency due to less heat generation
* Smaller Printed-Circuit Board (PCB) area than for conventional transistors
* AEC-Q101 qualified
* High-voltage power switche

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