PBSS4041PZ PNP transistor

nexperia

Description

PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor Rev.01 * 31 March 2010 Product data sheet 1.Product profile 1.1 General descripti.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PBSS4041PZ
Manufacturer: nexperia ↗
File Size: 698.64 KB
Datasheet: PBSS4041PZ-nexperia.pdf
Description: PNP transistor

Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified
* Smaller required Printed-Ci

Applications

* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base c

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PBSS4041PZ PNP transistor nexperia

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