Datasheet4U Logo Datasheet4U.com

PBSS4230PAN 2A NPN/NPN low VCEsat (BISS) transistor

PBSS4230PAN Description

PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1.General .
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.

PBSS4230PAN Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduced Printed-Circuit Board (PCB) requirements
* High efficiency due to less heat generation
* AEC-Q1

PBSS4230PAN Applications

* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VCEO collector-emitter voltage IC collector current

📥 Download Datasheet

Preview of PBSS4230PAN PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

📌 All Tags

NPN NPN low VCEsat BISS transistor nexperia
nexperia PBSS4230PAN-like datasheet