Datasheet Specifications
- Part number
- PBSS4230PANP
- Manufacturer
- NXP ↗
- File Size
- 358.17 KB
- Datasheet
- PBSS4230PANP_NXP.pdf
- Description
- NPN/PNP low VCEsat (BISS) transistor
Description
PBSS4230PANP 14 December 2012 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1.General .Features
* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q1Applications
* Load switch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM TR1 (NPN) RCEsat collector-emitter saturation resistance IC = 1 A; IB = 100 mA; pulsed; tp ≤PBSS4230PANP Distributors
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