PBSS4230T Datasheet - NXP

PBSS4230T NPN low VCEsat (BISS) transistor

NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5230T. MARKING TYPE NUMBER PBSS4230T Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS423.

PBSS4230T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative to MOSFETs in specific applications. AP

PBSS4230T Datasheet (47.87 KB)