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PBSS4230T NPN low VCEsat (BISS) transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat (BISS) transistor Product specification 2003 Sep 29 Philips Semiconduc.
NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters.

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Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency leading to less heat generation
* Reduced printed-circuit board requirements

Applications

* APPLICATIONS
* Power management
* DC/DC conversion
* Supply line switching
* Battery charger
* LCD backlighting.
* Peripheral driver
* Driver in low supply voltage applications (e. g. lamps and LEDs)
* Inductive load drivers (e. g. relay

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