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PBSS4230QA-Q 30V 2A NPN low VCEsat transistor

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Description

PBSS4230QA-Q 30 V, 2 A NPN low VCEsat transistor 8 July 2025 Product data sheet 1.General .
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side.

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Features

* Very Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* High energy efficiency due to less heat generation
* Reduced Printed-Circuit Board (PCB) area requirments

Applications

* 3. Applications
* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC ICM RCEsat colle

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