* s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s
PBSS4220V Datasheet (158.70 KB)
PBSS4220V
158.70 KB
2a npn low vcesat (biss) transistor.
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PBSS4220V
20 V, 2 A NPN low VCEsat (BISS) transistor
Rev. 01
* 6 February 2006 Product data sheet
1. Product profile
1.1 .
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