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PBSS4220V 2A NPN low VCEsat (BISS) transistor

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Description

www.DataSheet4U.com PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor Rev.01 * 6 February 2006 Product data sheet 1.Product profile 1.1 .
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.

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Applications

* s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e. g. motors, fans) Portable applications 1.4 Quick reference data Table 1: VCEO IC ICM RCEsat [1] Quick reference data Conditions open base tp ≤ 300 µs IC = 1 A; IB = 100 mA [1] Symbol Paramete

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