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PBSS4260PAN - 2A NPN/NPN low VCEsat (BISS) transistor

Datasheet Summary

Description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4260PANP.

PNP/PNP complement: PBSS5260PAP.

Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • High efficiency due to less heat generation.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PBSS4260PAN
Manufacturer nexperia
File Size 740.74 KB
Description 2A NPN/NPN low VCEsat (BISS) transistor
Datasheet download datasheet PBSS4260PAN Datasheet
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PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • Load switch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g. motors, fans) 4.
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