PBSS4260PANS NPN/NPN Transistor

nexperia

Description

PBSS4260PANS 60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor 15 December 2015 Product data sheet 1.General .
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD).

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Datasheet Specifications

Part number: PBSS4260PANS
Manufacturer: nexperia ↗
File Size: 727.75 KB
Datasheet: PBSS4260PANS-nexperia.pdf
Description: NPN/NPN Transistor

Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduced Printed-Circuit Board (PCB) requirements
* Exposed heat sink for excellent thermal and electrical condu

Applications

* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* LED lighting
* Power switches (e. g. motors, fans) 4. Quick reference d

PBSS4260PANS Distributors

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PBSS4260PANS NPN NPN Transistor nexperia

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