PBSS4260QA NPN low VCEsat (BISS) transistor

NXP

Description

DF N1 01 PBSS4260QA 28 August 2013 0D -3 60 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 1.General .
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic pack.

📥 Download Datasheet

PBSS4260QA Datasheet Preview — Preview of PBSS4260QA PDF

Datasheet Specifications

Part number: PBSS4260QA
Manufacturer: NXP ↗
File Size: 270.41 KB
Datasheet: PBSS4260QA_NXP.pdf
Description: NPN low VCEsat (BISS) transistor

Features

* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) ar

Applications

* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collec

PBSS4260QA Distributors

📁 Related Datasheet

PBSS4260PANPS PBSS4260PANS PBSS4220PANS PBSS4230QA PBSS4230QA-Q PBSS4240T

📌 All Tags

PBSS4260QA NPN low VCEsat BISS transistor NXP

NXP PBSS4260QA-like datasheet