Datasheet Specifications
- Part number
- PBSS4260PAN
- Manufacturer
- NXP ↗
- File Size
- 275.18 KB
- Datasheet
- PBSS4260PAN_NXP.pdf
- Description
- NPN/NPN low VCEsat (BISS) transistor
Description
PBSS4260PAN 12 December 2012 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor Product data sheet 1.General .Features
* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q1Applications
* Load switch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Symbol Per transistor VCEO IC ICM Per transistor RCEsat collector-emitter saturation resistance IC = 1 A; IB =PBSS4260PAN Distributors
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