PBSS4260PANP NPN/NPN low VCEsat (BISS) transistor

NXP

Description

PBSS4260PANP 12 December 2012 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1.General .
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.

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Datasheet Specifications

Part number: PBSS4260PANP
Manufacturer: NXP ↗
File Size: 363.96 KB
Datasheet: PBSS4260PANP_NXP.pdf
Description: NPN/NPN low VCEsat (BISS) transistor

Features

* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q1

Applications

* Load switch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM TR1 (NPN) RCEsat collector-emitter saturation resistance IC = 1 A; IB = 100 mA; pulsed; tp ≤

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PBSS4260PANP NPN NPN low VCEsat BISS transistor NXP

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