PBSS4240DPN - 40V low VCEsat NPN/PNP transistor

NXP

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Datasheet Details

Part number	PBSS4240DPN
Manufacturer	NXP ↗
File Size	136.02 KB
Description	40V low VCEsat NPN/PNP transistor
Datasheet	PBSS4240DPN_PhilipsSemiconductors.pdf

PBSS4240DPN Product details

Description

NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. 40 1.1 2 3 260 V A A A mΩ UNIT collector current (DC) repetitive peak collector current peak collector current equivalent on-resistance DESCRIPTION TR1; TR2 TR1;

Features

Low collector-emitter saturation voltage VCEsat.
High collector current capability IC and ICM.
High collector current gain hFE at high IC.
High efficiency leading to reduced heat generation.
Reduced printed-circuit board area requirements.

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Published: Jan 14, 2007 |