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PBSS4360Z NPN transistor

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Description

PBSS4360Z 60 V, 3 A NPN low VCEsat (BISS) transistor 26 February 2014 Product data sheet 1.General .
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

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Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High energy efficiency due to less heat generation

Applications

* DC-to-DC conversion
* Supply line switching
* Battery charger
* LCD backlighting
* Driver in low supply voltage applications (e. g. lamps and LEDs)
* Inductive load driver (e. g. relays, buzzers and motors) 4. Quick reference data Table 1. Symbol VCE

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