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PMGD290UCEA N/P-channel MOSFET

PMGD290UCEA Description

PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1.General .
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Tre.

PMGD290UCEA Features

* Very fast switching
* Trench MOSFET technology
* 2 kV ESD protection

PMGD290UCEA Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits
* Automotive applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions TR1 (N-channel), Static characteristics RDSon drain-source on

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