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PMPB10XNE N-channel MOSFET

PMPB10XNE Description

PMPB10XNE 20 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1.Product profile 1.1 General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

PMPB10XNE Features

* 2.2 kV ESD protection
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Exposed drain pad for excellent thermal conduction

PMPB10XNE Applications

* Charging switch for portable devices
* DC-to-DC converters
* Power management in battery-driven portables
* Hard disk and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-sourc

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