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PMPB12R5UPE P-channel MOSFET

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Description

PMPB12R5UPE 20 V, P-channel Trench MOSFET 24 February 2022 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic packag.

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Features

* Low threshold voltage
* Trench MOSFET technology
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Exposed drain pad for excellent thermal conduction

Applications

* Charging switch for portable devices
* DC-to-DC converters
* Power management in battery-driven portable devices
* Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drai

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