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PMPB12UNE - N-channel MOSFET

PMPB12UNE Description

PMPB12UNE 20 V, N-channel Trench MOSFET 12 April 2016 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

PMPB12UNE Features

* Trench MOSFET technology
* Low threshold voltage
* Exposed drain pad for excellent thermal conduction
* Tin-plated 100% solderable side pads for optical solder inspection

PMPB12UNE Applications

* LED driver
* Power management
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-s

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