Description
PMPB25ENE 30 V, N-channel Trench MOSFET 26 April 2018 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.
Features
* Extended temperature range Tj = 175 °C
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Tin-plated 100 % solderable side pads for optical solder inspection
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Trench MOSFET technology
Applications
* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-so