PMPB215ENEA single N-channel Trench MOSFET

NXP

Description

DFN2020MD-6 PMPB215ENEA 80 V, single N-channel Trench MOSFET 18 December 2013 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PMPB215ENEA
Manufacturer: NXP ↗
File Size: 233.31 KB
Datasheet: PMPB215ENEA-NXP.pdf
Description: single N-channel Trench MOSFET

Features

* Trench MOSFET technology
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Exposed drain pad for excellent thermal conduction
* Tin-plated 100 % solderable side pads for optical solder inspection

Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-so

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PMPB215ENEA single N-channel Trench MOSFET NXP

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