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PMPB20XPEA - P-channel MOSFET

PMPB20XPEA Description

PMPB20XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

PMPB20XPEA Features

* Low threshold voltage
* Trench MOSFET technology
* Side wettable flanks for optical solder inspection
* ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)

PMPB20XPEA Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C - - -20 VGS gate-source voltage -12 - 12

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