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PMV65XPEA P-channel MOSFET

PMV65XPEA Description

PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

PMV65XPEA Features

* Trench MOSFET technology
* Very fast switching
* Enhanced power dissipation capability: Ptot = 890 mW
* ElectroStatic Discharge (ESD) protection 2 kV HBM

PMV65XPEA Applications

* Relay driver
* High speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 -

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