PE29101 Datasheet (pSemi) - High-speed FET Driver

PE29101, High-speed FET Driver

F The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs.

The outputs of the PE29101 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40

PE29101 Features

* High- and low-side FET drivers

* Dead-time control

* Fast propagation delay, 11 ns

* Internal gate overvoltage management E

* Sub-nanosecond rise and fall time

* 2A/4A peak source/sink current

* Package

* flip chip Applications IF