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PE15N10 N-Channel Enhancement Mode Power MOSFET

PE15N10 Description

PE15N10 N-Channel Enhancement Mode Power MOSFET .
The PE15N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

PE15N10 Features

* VDS =100V,ID =15A RDS(ON) < 100mΩ @ VGS=10V (Typ:85mΩ )
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technolog

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Datasheet Details

Part number
PE15N10
Manufacturer
semi one
File Size
266.74 KB
Datasheet
PE15N10-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PE15N10-like datasheet