PE15N10

N-Channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number:

PE15N10

Manufacturer:

semi one

File Size:

266.74 KB

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Description:

N-channel enhancement mode power mosfet.
PE15N10 N-Channel Enhancement Mode Power MOSFET Description The PE15N10 uses advanced trench techno.
The PE15N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch.

✔ PE15N10 Features

VDS =100V,ID =15A RDS(ON) < 100mΩ @ VGS=10V (Typ:85mΩ )
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stabil

✔ PE15N10 Application

General Features
VDS =100V,ID =15A RDS(ON) < 100mΩ @ VGS=10V (Typ:85mΩ )
High density cell design for

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PE15N10 N-Channel Enhancement Mode Power MOSFET semi one

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