PE40N65 Datasheet, Mosfet, semi one

PE40N65 Features

• Mosfet
• VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good sta

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Part number:

PE40N65

Manufacturer:

semi one

File Size:

800.57kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE40N65 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide va

PE40N65 Application

• Applications PE40N65 General Features
• VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V
• High density cell design for ultra low Rdson

TAGS

PE40N65

semi one

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