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PE1012E - N-Channel Enhancement Mode Power MOSFET

PE1012E Description

PE1012E N-Channel Enhancement Mode Power MOSFET .
The PE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

PE1012E Features

* VDS = 20V,ID =0.6A RDS(ON)

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Datasheet Details

Part number
PE1012E
Manufacturer
semi one
File Size
113.44 KB
Datasheet
PE1012E-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PE1012E-like datasheet