QN3107M6N Datasheet - uPI Semiconductor

QN3107M6N N-Channel 30V Fast Switching MOSFET

The QN3107M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications. The QN3107M6N meets RoHS and Green Product requirements while suppor.

QN3107M6N Features

* Advanced high cell density Trench technology

* Super Low Gate Charge

* Green Device Available Product Summary VDS 30V RDS(ON) max (VGS=10V) 2.6mΩ ID (TC=25 °C) 118A Applications

* High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA

QN3107M6N Datasheet (1.00 MB)