QN3107M6N - N-Channel 30V Fast Switching MOSFET

Datasheet Summary

Description

The QN3107M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics.

It is ideally suited to support synchronous buck converter applications.

Features

Advanced high cell density Trench technology.
Super Low Gate Charge.
Green Device Available Product Summary VDS 30V RDS(ON) max (VGS=10V) 2.6mΩ ID (TC=25 °C) 118A.

uPI Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	QN3107M6N
Manufacturer	uPI Semiconductor
File Size	1.00 MB
Description	N-Channel 30V Fast Switching MOSFET
Datasheet	QN3107M6N Datasheet
Additional preview pages of the QN3107M6N datasheet.

📁 Similar Datasheet

QN3107M6N - N-Channel 30V Fast Switching MOSFET (UBIQ)
QN3103M6N - N-Channel 30V Fast Switching MOSFET (UBIQ)
QN3109 - N-Channel 30V Fast Switching MOSFET (UBIQ)
QN3109M6N - N-Channel 30V Fast Switching MOSFET (UBIQ)

Other Datasheets by uPI Semiconductor

QN3102M6N - N-Channel 30V Fast Switching MOSFET

Full PDF Text Transcription

Click to expand full text

QN3107M6N N-Channel 30V Fast Switching MOSFET General Description The QN3107M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications. The QN3107M6N meets RoHS and Green Product requirements while supporting full function reliability. Features  Advanced high cell density Trench technology  Super Low Gate Charge  Green Device Available Product Summary VDS 30V RDS(ON) max (VGS=10V) 2.

Published: Sep 2, 2024 |