SSC8128GT8
SSC8128GT8 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- VDS 25V
VGS ±20V
RDSon TYP 4.8m R@10V 6m R@4V5
ID 80A
- - General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
- Desktop puter
- Notebook
Pin Configuration
Top View
- Package Information
Units:mm
SSC-V1.0 http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Drain Current Power Dissipation(1)
Continuous Pulsed
Operating and Storage Junction Temperature Range
VGSS
ID PD TJ, TSTG
Ratings 25 ±20 80 200 2.5
-55 to +150
Unit V V
W °C
- Electrical Characteristics @ TA = 25°C unless otherwise noted
Parameter
Symbol Test Conditions
Min Typ Max Unit
Drain- Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 u...
