DESCRIPTION
AP16P02S -20V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -20V ID =-16A RDS(ON) < 20mΩ @ VGS=-4.5V (Type：14mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP16P02S SOP-8L AP16P02S XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID@TC=25℃ ID@TC=70℃ IDM PD@TC=25℃ Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 PD@TC=70℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating -20 ±12 -16 -8 -48 2.5 1.6 -55 to 150 -55 to 150 85 24 Qty(PCS) 3000 Units V V A A A W W ℃ ℃ ℃/W ℃/W AP16P02S RVE1.0 永源微電子科技有限公司 1 AP16P02S -20V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
