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AP16P02S - -20V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP16P02S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -20V ID =-16A RDS(ON) < 20mΩ @ VGS=-4.5V (Type：14mΩ).

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Datasheet Details

Part number AP16P02S
Manufacturer APM
File Size 1.44 MB
Description -20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP16P02S Datasheet
Additional preview pages of the AP16P02S datasheet.

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Full PDF Text Transcription

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Description AP16P02S -20V P-Channel Enhancement Mode MOSFET The AP16P02S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-16A RDS(ON) < 20mΩ @ VGS=-4.5V (Type：14mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP16P02S SOP-8L AP16P02S XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID@TC=25℃ ID@TC=70℃ IDM PD@TC=25℃ Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.
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