DESCRIPTION
AP170N03D 30V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS=30V ID =170A RDS(ON) < 2.5mΩ @ VGS=10V （Type：2.1mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP170N03D TO-252-3L Marking AP170N03D XXXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 ID@TC=75℃ IDM Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 IAS Avalanche Current PD@TC=25℃ Total Power Dissipation4 PD@TA=25℃ Total Power Dissipation4 TSTG TJ Operating Junction /Storage Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating 30 ±20 170 96 480 289 34 57 12 -55 to 150 25 2.2 Qty(PCS) 2500 Units V V A A A mJ A W W ℃ ℃/W ℃/W AP170N03D REV1.0 永源微電子科技有限公司 1 AP170N03D 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
