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AP170N03D - 30V N-Channel Enhancement Mode MOSFET

General Description

The AP170N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS=30V ID =170A RDS(ON) < 2.5mΩ @ VGS=10V （Type：2.1mΩ）.

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Datasheet Details

Part number AP170N03D
Manufacturer APM
File Size 842.31 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP170N03D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP170N03D 30V N-Channel Enhancement Mode MOSFET The AP170N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=30V ID =170A RDS(ON) < 2.5mΩ @ VGS=10V （Type：2.