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AP18P02BF - -20V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP18P02BF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -20V ID =-18A RDS(ON) < 22mΩ @ VGS=-4.5V (Type：18mΩ).

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Datasheet Details

Part number AP18P02BF
Manufacturer APM
File Size 774.00 KB
Description -20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP18P02BF Datasheet
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Full PDF Text Transcription

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Description AP18P02BF -20V P-Channel Enhancement Mode MOSFET The AP18P02BF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-18A RDS(ON) < 22mΩ @ VGS=-4.5V (Type：18mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP18P02BF QFN2X2-6L AP18P02BF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ -4.
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