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AP1N40MI - 400V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP1N40MI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • VDS = 400V ID =1A RDS(ON) < 8500mΩ @ VGS=10V （Type：7200mΩ）.

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Datasheet Details

Part number AP1N40MI
Manufacturer APM
File Size 1.22 MB
Description 400V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP1N40MI Datasheet
Additional preview pages of the AP1N40MI datasheet.

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Full PDF Text Transcription

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AP1N40MI 400V N-Channel Enhancement Mode MOSFET Description The AP1N40MI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
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