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AP200N03NF - 30V N-Channel Enhancement Mode MOSFET

General Description

The AP200N03NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 30V ID =200A RDS(ON) < 1.0mΩ @ VGS=10V（Type：0.8mΩ）.

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Datasheet Details

Part number AP200N03NF
Manufacturer APM
File Size 761.02 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP200N03NF Datasheet

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Description AP200N03NF 30V N-Channel Enhancement Mode MOSFET The AP200N03NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =200A RDS(ON) < 1.0mΩ @ VGS=10V（Type：0.8mΩ） Application Buck Boost Package Marking and Ordering Information Product ID Pack Marking AP200N03NF PDFN5*6-8L AP200N03NF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max.