AP200N03NF Datasheet | APM

Description 30V N-Channel Enhancement Mode MOSFET The AP200N03NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =200A RDS(ON) < 1.0mΩ @ VGS=10V（Type：0.8mΩ） Application Buck Boost Package Marking and Ordering Information Product ID Pack Marking PDFN5- 6-8L AP200N03NF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. VDSS VGSS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TJ TSTG RθJA RθJC Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current Single Pulsed Avalanche Energy Avalanche Current Power Dissipation Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance, Junction to Case 30 ±20 200 185 1012 745 57 160 -55 to 150 25 0.78 Qty(PCS) 5000 Units V V A A A m J A W °C °C/W ℃/W AP200N03NF REV1.0 永源微電子科技有限公司 30V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA - - V l...