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AP25G03GD - 30V N+P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

operation with gate voltages as low as 4.5V.

or in other Switching application.

Features

  • VDS = 30V ID =25A RDS(ON) < 22mΩ @ VGS=10V （Type：15mΩ） VDS = -30V ID =-24A Only RDS(ON).

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Datasheet preview – AP25G03GD

Datasheet Details

Part number AP25G03GD
Manufacturer APM
File Size 1.86 MB
Description 30V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP25G03GD Datasheet
Additional preview pages of the AP25G03GD datasheet.

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Full PDF Text Transcription

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sales.Mr.wang13826508770 www.sztssd.com AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP25G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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