• Part: AP25G03GD
  • Description: 30V N+P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: APM
  • Size: 1.86 MB
Download AP25G03GD Datasheet PDF
APM
AP25G03GD
AP25G03GD is 30V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description The AP25G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =25A RDS(ON) < 22mΩ @ VGS=10V (Type:15mΩ) VDS = -30V ID =-24A Only RDS(ON) <32mΩ @ VGS=-10V (Type:25mΩ) Application Use Boost driver Brushless motor times Package Marking and Ordering Information g Product ID Pack Marking en AP25G03GD TO-252-4L AP25G03GD XXX YYYY sh Absolute Maximum Ratings (TC=25℃unless otherwise noted) ng Symbol Parameter Rating N-Ch To VDS Drain-Source Voltage P-Ch -30 VGS r ID@TA=25℃ Fo ID@TA=100℃ Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 ±20 25 10 ±20 -24 -8 Pulsed Drain Current2 -45 Single Pulse Avalanche Energy3 Avalanche Current -30 PD@TA=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to...