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AP25G03GD Datasheet 30v N+p-channel Enhancement Mode MOSFET

Manufacturer: APM

Overview: sales.Mr.wang13826508770 .sztssd. AP25G03GD 30V N+P-Channel Enhancement Mode.

Datasheet Details

Part number AP25G03GD
Manufacturer APM
File Size 1.86 MB
Description 30V N+P-Channel Enhancement Mode MOSFET
Datasheet AP25G03GD-APM.pdf

General Description

The AP25G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Key Features

  • VDS = 30V ID =25A RDS(ON) < 22mΩ @ VGS=10V (Type:15mΩ) VDS = -30V ID =-24A Only RDS(ON).

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