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AP25G03GD Datasheet PDF

APM AP25G03GD

The AP25G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP25G03GD
Datasheet AP25G03GD Download
Manufacturer
APM
Description 30V N+P-Channel Enhancement Mode MOSFET
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AP25G03GD datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 30V ID =25A RDS(ON) < 22mΩ @ VGS=10V (Type:15mΩ) VDS = -30V ID =-24A Only RDS(ON) <32mΩ @ VGS=-10V (Type:25mΩ) Application Use Boost driver Brushless motor times Package Marking and Ordering Information g Product ID Pack Marking en AP25G03GD TO-252-4L AP25G03GD XXX YYYY sh

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) ng Symbol Parameter Rating N-Ch To VDS Drain-Source Voltage 30 P-Ch -30 VGS r ID@TA=25℃ Fo ID@TA=100℃ Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 ±20 25 10 ±20 -24 -8 IDM Pulsed Drain Current2 52 -45 EAS Single Pulse Avalanche Energy3 22 45 IAS Avalanche Current 21 -30 PD@TA=25℃ Total Power Dissipation4 18 18 TSTG Storage Temperature Range -55 to 150 -55 to 150 TJ Operating Junction Temperature Range -55 to 150 -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 62 RθJC Thermal Resistance Junction-Case1 5 Qty(PCS) 2500 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W 1 AP25G03GD RVE1.0 永源微電...
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