AP25G03GD
AP25G03GD is 30V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
The AP25G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 30V ID =25A RDS(ON) < 22mΩ @ VGS=10V (Type:15mΩ) VDS = -30V ID =-24A
Only
RDS(ON) <32mΩ @ VGS=-10V (Type:25mΩ) Application
Use
Boost driver Brushless motor times
Package Marking and Ordering Information g Product ID
Pack
Marking en AP25G03GD
TO-252-4L
AP25G03GD XXX YYYY sh Absolute Maximum Ratings (TC=25℃unless otherwise noted) ng Symbol
Parameter
Rating N-Ch
To VDS
Drain-Source Voltage
P-Ch -30
VGS r ID@TA=25℃ Fo ID@TA=100℃
Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1
±20 25 10
±20 -24 -8
Pulsed Drain Current2
-45
Single Pulse Avalanche Energy3
Avalanche Current
-30
PD@TA=25℃
Total Power Dissipation4
TSTG
Storage Temperature Range
-55 to...