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AP25G04GD - 40V N+P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP25G04GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 40V ID =28 A RDS(ON) < 24mΩ @ VGS=10V （Type：18mΩ） VDS = -40V ID =25A RDS(ON) < 40mΩ @ VGS=10V （Type：32mΩ）.

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Datasheet preview – AP25G04GD

Datasheet Details

Part number AP25G04GD
Manufacturer APM
File Size 1.48 MB
Description 40V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP25G04GD Datasheet
Additional preview pages of the AP25G04GD datasheet.

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Full PDF Text Transcription

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AP25G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The AP25G04GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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