AP25G04GD
AP25G04GD is 40V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
The AP25G04GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features
VDS = 40V ID =28 A RDS(ON) < 24mΩ @ VGS=10V （Type：18mΩ）
VDS = -40V ID =25A RDS(ON) < 40mΩ @ VGS=10V （Type：32mΩ）
Application Boost driver Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
TO-252-4L
AP25G04GD XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol VDS
Parameter Drain-Source Voltage
N-Ch 40
Rating
P-Ch -40
Gate-Source Voltage
±20
±20
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃
Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4
28 18 46 28 17.8 25
-25 -16 -40 66 -27.2 31.3
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
Operating Junction Temperature Range
-55 to 150
-55 to 150
RθJA
Thermal Resistance Junction-Ambient...
