DESCRIPTION
GENERAL FEATURES
VDS = 40V ID =28 A RDS(ON) < 24mΩ @ VGS=10V （Type：18mΩ） VDS = -40V ID =25A RDS(ON) < 40mΩ @ VGS=10V （Type：32mΩ） Application Boost driver Brushless motor Package Marking and Ordering Information Product ID Pack Marking AP25G04GD TO-252-4L AP25G04GD XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol VDS Parameter Drain-Source Voltage N-Ch 40 Rating P-Ch -40 VGS Gate-Source Voltage ±20 ±20 ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 28 18 46 28 17.8 25 -25 -16 -40 66 -27.2 31.3 TSTG Storage Temperature Range -55 to 150 -55 to 150 TJ Operating Junction Temperature Range -55 to 150 -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 62 RθJC Thermal Resistance Junction-Case1 5 Qty(PCS) 2500 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP25G04GD RVE1.0 永源微電子科技有限公司 1 AP25G04GD 40V N+P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TC=25℃unless otherwise noted) Symbol Parameter Conditions Min.
APM
