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AP25G04GD - 40V N+P-Channel Enhancement Mode MOSFET

General Description

The AP25G04GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 40V ID =28 A RDS(ON) < 24mΩ @ VGS=10V （Type：18mΩ） VDS = -40V ID =25A RDS(ON) < 40mΩ @ VGS=10V （Type：32mΩ）.

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Datasheet Details

Part number AP25G04GD
Manufacturer APM
File Size 1.48 MB
Description 40V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP25G04GD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP25G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The AP25G04GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.