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AP30G04NF - 40V N+P-Channel Enhancement Mode MOSFET

General Description

The AP30G04NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS =40V ID =38A RDS(ON) < 10mΩ @ VGS=10V （Type：8.0mΩ） VDS = -40V ID =-35A RDS(ON) < 18mΩ @ VGS=-10V （Type：13mΩ）.

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Datasheet Details

Part number AP30G04NF
Manufacturer APM
File Size 1.10 MB
Description 40V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP30G04NF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET The AP30G04NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS =40V ID =38A RDS(ON) < 10mΩ @ VGS=10V （Type：8.