DESCRIPTION
AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS =40V ID =38A RDS(ON) < 10mΩ @ VGS=10V （Type：8.0mΩ） VDS = -40V ID =-35A RDS(ON) < 18mΩ @ VGS=-10V （Type：13mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack Marking AP30G04NF PDFN5X6-8L AP30G04NF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch VDS Drain-Source Voltage 40 -40 VGS Gate-Source Voltage ±20 ±20 ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 38 -35 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 31 -29 IDM Pulsed Drain Current2 144 -129 EAS Single Pulse Avalanche Energy3 128 185 IAS Avalanche Current 16 -18 PD@TC=25℃ Total Power Dissipation4 48 51.3 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 25 RθJC Thermal Resistance Junction-Case1 2.3 Qty(PCS) 5000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP30G04NF REV1.0 永源微電子科技有限公司 1 AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
