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AP30G04NF Datasheet 40v N+p-channel Enhancement Mode MOSFET

Manufacturer: APM

Overview: Description AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET The AP30G04NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

Datasheet Details

Part number AP30G04NF
Manufacturer APM
File Size 1.10 MB
Description 40V N+P-Channel Enhancement Mode MOSFET
Datasheet AP30G04NF-APM.pdf

General Description

AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET The AP30G04NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Key Features

  • VDS =40V ID =38A RDS(ON) < 10mΩ @ VGS=10V (Type:8.0mΩ) VDS = -40V ID =-35A RDS(ON) < 18mΩ @ VGS=-10V (Type:13mΩ).

AP30G04NF Distributor