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AP30H04DF Datasheet 40v N+n-channel Enhancement Mode MOSFET

Manufacturer: APM

Overview: Description AP30H04DF 40V N+N-Channel Enhancement Mode MOSFET The AP30H04DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

Datasheet Details

Part number AP30H04DF
Manufacturer APM
File Size 1.24 MB
Description 40V N+N-Channel Enhancement Mode MOSFET
Datasheet AP30H04DF-APM.pdf

General Description

AP30H04DF 40V N+N-Channel Enhancement Mode MOSFET The AP30H04DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Key Features

  • VDS = 40V ID =30A RDS(ON) < 14mΩ @ VGS=10V (Type:11mΩ).

AP30H04DF Distributor