APM AP30H04DF
The AP30H04DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.| Part No. | AP30H04DF |
|---|---|
| Datasheet | AP30H04DF Download |
| Manufacturer |  APM |
| Description | 40V N+N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
AP30H04DF 40V N+N-Channel Enhancement Mode MOSFETGENERAL FEATURES
VDS = 40V ID =30A RDS(ON) < 14mΩ @ VGS=10V （Type：11mΩ） Application Wireless charging Boost driver Brushless motor Package Marking and Ordering Information Product ID Pack AP30H04DF PDFN3*3-8LABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID@TA=25℃ Gate-Source Voltage Continuous Drain Current1 ID@TA=70℃ Continuous Drain Current1 IDM EAS Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS PD@TA=25℃ Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA RθJC Thermal Resistance Junction-ambient1(t≤10s) Thermal Resistance Junction-ambient1 Marking AP30H04DF XXX YYYY Rating 40 ±20 30 21 36 31 25 1.9 -55 to 150 -55 to 150 62.5 8 Qty(PCS) 5000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP30H04DF RVE1.0 永源微電子科技有限公司 1 AP30H04DF 40V N+N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TC=25℃un...
