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AP30H04DF - 40V N+N-Channel Enhancement Mode MOSFET

General Description

The AP30H04DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 40V ID =30A RDS(ON) < 14mΩ @ VGS=10V （Type：11mΩ）.

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Datasheet Details

Part number AP30H04DF
Manufacturer APM
File Size 1.24 MB
Description 40V N+N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP30H04DF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP30H04DF 40V N+N-Channel Enhancement Mode MOSFET The AP30H04DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.