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AP30H10NF - 100V N-Channel Enhancement Mode MOSFET

General Description

The AP30H10NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 100V ID =30A RDS(ON) < 45mΩ@ VGS=10V （Type：36mΩ）.

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Datasheet Details

Part number AP30H10NF
Manufacturer APM
File Size 609.50 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP30H10NF Datasheet

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Description AP30H10NF 100V N-Channel Enhancement Mode MOSFET The AP30H10NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.