DESCRIPTION
AP30H10NF 100V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 100V ID =30A RDS(ON) < 45mΩ@ VGS=10V （Type：36mΩ） Application Automative lighting Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP30N10NF PDFN5*6-8L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Maximum Thermal Resistance, Junctionambient Maximum Thermal Resistance, Junction-case Marking AP30N10NF XXX YYYY Qty(PCS) 5000 Rating 100 ±20 30 13 90 42 1.7 -55 to 150 -55 to 150 25 3.6 Units V V A A A W W ℃ ℃ ℃/W ℃/W AP30H10NF REV1.0 永源微電子科技有限公司 1 AP30H10NF 100V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Condition Min.
APM
